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| PD - 9.1247C PRELIMINARY IRF7406 HEXFET(R) Power MOSFET 8 7 Generation V Technology Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S 1 A D D D D S S G 2 VDSS = -30V 3 6 4 5 RDS(on) = 0.045 T op V ie w Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S O -8 Absolute Maximum Ratings Parameter I D @ T A = 25C I D @ T A = 25C I D @ T A = 70C I DM PD @TA = 25C VGS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. -6.7 -5.8 -3.7 -23 2.5 0.02 20 -1.3 -55 to + 150 Units A W W/C V V/ns C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Typ. --- Max. 50 Units C/W 8/8/97 IRF7406 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Min. -30 --- --- --- -1.0 3.1 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -250A -0.020 --- V/C Reference to 25C, ID = -1mA --- 0.045 VGS = -10V, ID = -2.8A --- 0.070 VGS = -4.5V, ID = -2.4A --- --- V VDS = VGS, I D = -250A --- --- S VDS = -15V, ID = -2.8A --- -1.0 VDS = -24V, VGS = 0V A --- -25 VDS = -24V, VGS = 0V, TJ = 125C --- -100 V GS = -20V nA --- 100 VGS = 20V --- 59 ID = -2.8A --- 5.7 nC VDS = -2.4V --- 21 V GS = -10V, See Fig. 6 and 12 16 --- VDD = -15V 33 --- ID = -2.8A ns 45 --- RG = 6.0 47 --- RD = 5.3, See Fig. 10 D 2.5 4.0 --- nH --- Between lead tip and center of die contact VGS = 0V VDS = -25V = 1.0MHz, See Fig. 5 G S --- 1100 --- --- 490 --- --- 220 --- pF Source-Drain Ratings and Characteristics IS ISM VSD t rr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- -3.1 showing the A G integral reverse --- --- -23 p-n junction diode. S --- --- -1.0 V TJ = 25C, IS = -2.0A, VGS = 0V --- 42 63 ns TJ = 25C, IF = -2.8A --- 64 96 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. I SD -2.8A, di/dt 90A/s, VDD V(BR)DSS , TJ 150C Surface mounted on FR-4 board, t 10sec. IRF7406 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4.5V TOP 1000 -ID , D ra in -to -S o u rc e C u rre n t (A ) 100 -I D , D ra in -to -S o u rc e C u rre n t (A ) VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4.5V TOP 100 -4.5V 10 -4.5 V 10 1 0.1 1 20 s PU LSE W IDT H TJ = 25 C A 10 100 1 0.1 1 2 0 s PU L SE W ID TH T J = 1 50 C 10 A 100 -VD S , Drain-to-Source V oltage (V) -V D S , Drain-to-Source V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 R D S (o n ) , D ra in -to -S o u rc e O n R e s ista n ce (N o rm a liz e d ) I D = -4.7A - I D , D rain-to -S o urc e C u rre nt (A ) 1.5 TJ = 2 5 C 100 1.0 TJ = 1 5 0 C 0.5 10 4 5 6 7 V D S = - 15 V 2 0 s P U L S E W ID TH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 VG S = -10 V 100 120 140 160 A -VG S , G ate-to-S o urce V oltage (V ) T J , Junction T emperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF7406 2500 2000 -V G S , G a te -to -S o u rc e V o lta g e (V ) V GS C is s C rs s C o ss = 0 V, f = 1M H z = C gs + C gd , Cds SH OR TED = C gd = C ds + C gd 20 I D = -2.8A V DS = -2 4V 16 C , C a p a c ita n c e (p F ) 1500 C is s C os s 12 1000 8 500 C rs s 4 0 1 10 100 A 0 0 20 FOR TE ST C IR C U IT SE E FIG U R E 1 2 40 60 A -VD S , D rain-to-S ource V oltage (V) Q G , Total Gate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -IS D , R e ve rs e D ra in C u rre n t (A ) OPERATION IN THIS AREA LIMITED BY RDS(on) -I D , Drain Current (A) I 10 100us TJ = 15 0C TJ = 25 C 10 1ms 1 0.1 0.3 0.6 0.9 VG S = 0 V A 1.2 1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 -VS D , S ource-to-Drain Voltage (V ) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRF7406 6.0 VDS 5.0 RD VGS RG D.U.T. + -ID , Drain Current (A) 4.0 -10V 3.0 Pulse Width 1 s Duty Factor 0.1 % 2.0 Fig 10a. Switching Time Test Circuit VDS 90% 1.0 0.0 25 50 75 100 125 150 T C , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10b. Switching Time Waveforms 100 (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 10 Thermal Response 0.1 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient - VDD IRF7406 Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F QGS VG QGD VGS -3mA IG ID Charge Current Sampling Resistors Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit + -10V D.U.T. - VDS IRF7406 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG VGS* ** * dv/dt controlled by RG * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test + - * VDD * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS IRF7406 Package Outline SO-8 Outline Dimensions are shown in millimeters (inches) INCHES D -B- MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 DIM 5 MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45 e1 A e e1 H K L .050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8 0.10 (.004) 6 -CB 8X 0.25 (.010) A1 M CASBS L 8X C 8X RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS 6 MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X 6.46 ( .255 ) 1.78 (.070) 8X Part Marking Information SO-8 E X A M P LE : TH IS IS A N IR F 7 101 D A T E C O D E (Y W W ) Y = LA S T D IG IT O F T H E YE A R W W = W EEK XX X X W AFER LO T C O D E (LA S T 4 D IG IT S ) 3 12 IN T E R N A TI ON A L R E C T IF IE R LO G O F 7 101 T OP PART NUMBER B O T TO M IRF7406 Tape & Reel Information SO-8 Dimensions are shown in millimeters (inches) 1.85 ( .072) 4.10 ( .161) 1.65 ( .065) 3.90 ( .154) 1.60 (.062) 1.50 (.059) 0.35 (.013) 0.25 (.010) TER MIN ATIO N NUM BER 1 2.05 (.08 0) 1.95 (.07 7) 1 5.55 (.218) 5.45 (.215) 5.30 ( .208) 5.10 ( .201) 12.30 (.4 84) 11.70 (.4 61) FE ED D IREC TIO N 8.10 ( .318) 7.90 ( .311) 6.50 ( .255) 6.30 ( .248) 2.60 ( .102) 1.50 ( .059) 2.20 (.086) 2.00 (.079) 13.20 (.519) 12.80 (.504) 1 5.40 (.60 7) 1 1.90 (.46 9) 2 330.00 ( 13.000) MA X. 50.0 0 (1.969) MIN. NO TE S: 1 CO N FO RMS TO E IA- 481-1 2 IN CLUDE S FLA NG E DISTO RTIO N @ O UTER EDG E 3 DIME NSIO NS M EA SURE D @ HUB 4 CO N TR O LLING DIME NSIO N : M ETRIC 18.40 ( .724) M AX 3 14.40 ( .566) 12.40 ( .448) 3 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97 |
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